edge dislocation वाक्य
उदाहरण वाक्य
मोबाइल
- The stresses caused by an edge dislocation are complex due to its inherent asymmetry.
- Edge dislocations form so called tilt walls, while screw dislocations form twist walls.
- Slip occurs by dislocation glide of either screw or edge dislocations within a slip plane.
- Edge dislocations form the edge of an extra layer of atoms inside the crystal lattice.
- Edge dislocations are caused by the termination of a plane of atoms in the middle of a crystal.
- There are two types of dislocations in crystals that can induce slip-edge dislocations and screw dislocations.
- A pure edge dislocation is shown at the island interface to illustrate the relieved structure of the cluster.
- In the case of an edge dislocation, a half plane of atoms is wedged between two planes of atoms.
- Another crude analogy : Think of a crystal with line defects ( edge dislocations and screw dislocations but not disclinations ).
- Where the orientation of the dislocation line changes, a screw dislocation can continue as an edge dislocation and vice versa.
- Despite the difficulty in visualization, the stresses caused by a screw dislocation are less complex than those of an edge dislocation.
- This means edge dislocations move in directions parallel to their dislocation lines and screw dislocations move in directions perpendicular to their dislocation lines.
- For example, there are compressively strained bonds directly next to an edge dislocation and tensilely strained bonds beyond the end of an edge dislocation.
- For example, there are compressively strained bonds directly next to an edge dislocation and tensilely strained bonds beyond the end of an edge dislocation.
- HIRF can be improved by incorporating dopants that create temporary deep electron traps, optimizing the degree of sulfur sensitization, introducing crystalline defects ( edge dislocation ).
- This is very often the site of shallow electron traps, such as crystalline defect ( particularly edge dislocation ) and silver sulfide specks created by sulfur sensitization process.
- Edge dislocations have the direction of the burgers vector perpendicular to the dislocation line, while screw dislocations have the direction of the burgers vector parallel to the dislocation line.
- Shallow electron traps are created by sulfur sensitization, introduction of a crystalline defect ( edge dislocation ), and incorporating a trace amount of non-silver salt as a dopant.
- Many modern negative emulsions introduce a layer just under the crystal surface where a sufficient number of edge dislocations are intentionally created, while maintaining the bulk of the crystal interior defect-free.
- Most, if not all, old technology negative film emulsions had many unintentionally created edge dislocation sites ( and other crystalline defects ) internally and sulfur sensitization was performed on the surface of the crystal.
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